onsemiMJE344G通用双极型晶体管

Trans GP BJT NPN 200V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box

This NPN MJE344G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

A datasheet is only available for this product at this time.