onsemiMMBT4126LT1GGP BJT

Trans GP BJT PNP 25V 0.2A 300mW 3-Pin SOT-23 T/R

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP MMBT4126LT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 4 V.

Import TariffMay apply to this part

47.942 pezzi: Spedisce domani

    Total$0.15Price for 1

    • Service Fee  $7.00

      Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2238+
      Manufacturer Lead Time:
      8 settimane
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      Cina
         
      • Price: $0.1454
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2238+
      Manufacturer Lead Time:
      8 settimane
      Country Of origin:
      Cina
      • In Stock: 11.942 pezzi
      • Price: $0.1454
    • (3000)

      Spedisce domani

      Increment:
      3000
      Ships from:
      Stati Uniti d'America
      Date Code:
      2330+
      Manufacturer Lead Time:
      8 settimane
      Country Of origin:
      Cina
      • In Stock: 36.000 pezzi
      • Price: $0.028