onsemiMMBT4126LT1GGP BJT

Trans GP BJT PNP 25V 0.2A 300mW 3-Pin SOT-23 T/R

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP MMBT4126LT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 4 V.

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      Date Code:
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      • Price: $0.1454
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 내일 배송

      Ships from:
      미국
      Date Code:
      2238+
      Manufacturer Lead Time:
      8 주
      Country Of origin:
      중국
      • In Stock: 11,942 부품
      • Price: $0.1454
    • (3000)

      내일 배송

      Increment:
      3000
      Ships from:
      미국
      Date Code:
      2330+
      Manufacturer Lead Time:
      8 주
      Country Of origin:
      중국
      • In Stock: 36,000 부품
      • Price: $0.028