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onsemiMMBT6428LT1GGP BJT
Trans GP BJT NPN 50V 0.2A 300mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
8541.21.00.95 | |
Automotive | No |
PPAP | No |
Mounting | Surface Mount |
Package Height | 0.94 mm |
Package Width | 1.3 mm |
Package Length | 2.9 mm |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
3 | |
Lead Shape | Gull-wing |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN MMBT6428LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
EDA / CAD Models |