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onsemiMMBT6428LT1GGP BJT

Trans GP BJT NPN 50V 0.2A 300mW 3-Pin SOT-23 T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN MMBT6428LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

12,000 piezas: Se puede enviar en 2 días

    Total$107.10Price for 3000

    • (3000)

      Se puede enviar en 2 días

      Ships from:
      Países Bajos
      Date Code:
      2541+
      Manufacturer Lead Time:
      42 semanas
      Country Of origin:
      China
      • In Stock: 12,000 piezas
      • Price: $0.0357

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