onsemiMUN5235T1GBJT digitale

Trans Digital BJT NPN 50V 0.1A 310mW 3-Pin SC-70 T/R

You can apply the benefits of traditional BJTs to digital circuits using the NPN MUN5235T1G digital transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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18 pezzi: Spedizione in giornata

    Total$0.15Price for 1

    • Service Fee  $7.00

      Spedizione in giornata

      Ships from:
      Stati Uniti d'America
      Date Code:
      1842+
      Manufacturer Lead Time:
      6 settimane
      Minimum Of :
      1
      Maximum Of:
      18
      Country Of origin:
      Cina
         
      • Price: $0.1534
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedizione in giornata

      Ships from:
      Stati Uniti d'America
      Date Code:
      1842+
      Manufacturer Lead Time:
      6 settimane
      Country Of origin:
      Cina
      • In Stock: 18 pezzi
      • Price: $0.1534