Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
Installation | Surface Mount |
Hauteur du paquet | 0.85 |
Largeur du paquet | 1.24 |
Longueur du paquet | 2 |
Carte électronique changée | 3 |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SC-70 |
3 | |
Forme de sonde | Gull-wing |
You can apply the benefits of traditional BJTs to digital circuits using the NPN MUN5235T1G digital transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
EDA / CAD Models |