Infineon Technologies AGSMBT3904E6327HTSA1GP BJT
Trans GP BJT NPN 40V 0.2A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
LTB | |
8541.29.00.95 | |
Automotive | Yes |
PPAP | Unknown |
NPN | |
Bipolar Small Signal | |
Si | |
Single | |
1 | |
60 | |
40 | |
6 | |
0.85@1mA@10mA|0.95@5mA@50mA | |
150 | |
0.2@1mA@10mA|0.3@5mA@50mA | |
0.2 | |
50 | |
100@10mA@1V|30@100mA@1V|40@100uA@1V|60@50mA@1V|70@1mA@1V | |
330 | |
300(Min) | |
-65 | |
150 | |
Tape and Reel | |
Automotive | |
Mounting | Surface Mount |
Package Height | 1(Max) |
Package Width | 1.3 |
Package Length | 2.9 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
3 | |
Lead Shape | Gull-wing |
Design various electronic circuits with this versatile NPN SMBT3904E6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.