Infineon Technologies AGSMBT3904E6327HTSA1GP BJT

Trans GP BJT NPN 40V 0.2A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile NPN SMBT3904E6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Import TariffMay apply to this part

76,573 부품 : 오늘 배송

    Total$0.09Price for 1

    • Service Fee  $7.00

      오늘 배송

      Ships from:
      미국
      Date Code:
      2133+
      Manufacturer Lead Time:
      4 주
      Minimum Of :
      1
      Maximum Of:
      73990
      Country Of origin:
      오스트리아
         
      • Price: $0.0864
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 오늘 배송

      Ships from:
      미국
      Date Code:
      2133+
      Manufacturer Lead Time:
      4 주
      Country Of origin:
      오스트리아
      • In Stock: 73,990 부품
      • Price: $0.0864
    • 10 일 이내 배송

      Ships from:
      미국
      Date Code:
      2208+
      Manufacturer Lead Time:
      0 주
      Country Of origin:
      중국
      • In Stock: 2,583 부품
      • Price: $0.038