STMicroelectronics STGWT20V60DF IGBT Chip

Trans IGBT Chip N-CH 600V 40A 167W 3-Pin(3+Tab) TO-3P Tube

Specifiche tecniche del prodotto

This STGWT20V60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 167000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.

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STMicroelectronicsSTGWT20V60DFIGBT Chip

Trans IGBT Chip N-CH 600V 40A 167W 3-Pin(3+Tab) TO-3P Tube

This STGWT20V60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 167000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.