STMicroelectronicsSTGWT20V60DFChip IGBT
Trans IGBT Chip N-CH 600V 40A 167W 3-Pin(3+Tab) TO-3P Tube
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 18.7 |
| Package Width | 5(Max) |
| Package Length | 15.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3P |
| 3 | |
| Lead Shape | Through Hole |
This STGWT20V60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 167000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |