| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 50 | |
| 50 | |
| 6 | |
| 1.2@100mA | |
| 0.23@50mA@1A|0.5@100mA@2A | |
| 3 | |
| 1000 | |
| 200@100mA@2V | |
| 1300 | |
| 390(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 2.5 |
| Package Length | 4.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP 2SA2125-TD-E general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |