Infineon Technologies AGBCW60DE6327HTSA1GP BJT
Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| BCW60DE6327HTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 32 | |
| 32 | |
| 6 | |
| 0.85@0.25mA@10mA|1.05@1.25mA@50mA | |
| 0.25@0.25mA@10mA|0.55@1.25mA@50mA | |
| 0.1 | |
| 100@10uA@5V|100@50mA@1V|380@2mA@5V | |
| 330 | |
| 250(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Jump-start your electronic circuit design with this versatile NPN BCW60DE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |