Infineon Technologies AGBFP740FESDH6327XTSA1RF BJT
Trans RF BJT NPN 4.2V 0.045A 160mW Automotive AEC-Q101 4-Pin TSFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 4.9 | |
| 4.2 | |
| <20 | |
| 0.045 | |
| 0.001 to 0.06 | |
| 10000 | |
| 400 | |
| 3V/25mA | |
| 160@25mA@3V | |
| 120 to 200 | |
| 0.5 | |
| 0.08 | |
| 160 | |
| 10(Typ) | |
| 39 | |
| 24.5(Typ) | |
| 47000(Typ) | |
| 1.45(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.55 mm |
| Package Width | 0.8 mm |
| Package Length | 1.4 mm |
| PCB changed | 4 |
| Supplier Package | TSFP |
| 4 |
If you are dealing with high radio frequency input power, Infineon Technologies' BFP740FESDH6327XTSA1 RF bi-polar junction transistor is for you. This RF transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |