NXP SemiconductorsBFU730F,115RF BJT
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin DFP T/R
Compliant | |
EAR99 | |
LTB | |
8541.21.00.75 | |
SVHC | Yes |
Automotive | No |
PPAP | No |
NPN | |
SiGe | |
Single Dual Emitter | |
1 | |
10 | |
2.8 | |
<20 | |
1 | |
0.03 | |
0.001 to 0.06 | |
100 | |
2.5V/20mA | |
205@2mA@2V | |
200 to 300 | |
0.442 | |
0.055 | |
197 | |
12.5(Typ) | |
29 | |
29(Typ) | |
55000(Typ) | |
1.3(Typ) | |
-65 | |
150 | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 0.75(Max) |
Package Width | 1.35(Max) |
Package Length | 2.2(Max) |
PCB changed | 4 |
Standard Package Name | DFP |
Supplier Package | DFP |
4 |
Use this BFU730F,115 RF amplifier from NXP Semiconductors in your circuit so that it is operating at high RF frequencies. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
EDA / CAD Models |