Diodes IncorporatedFZT651QTAGP BJT
Trans GP BJT NPN 60V 3A 3000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 60 | |
| 7 | |
| 1.25@100mA@1A | |
| 0.3@100mA@1A|0.6@300mA@3A | |
| 3 | |
| 100@500mA@2V|40@2A@2V|70@50mA@2V|80@1A@2V | |
| 2000 | |
| 175(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1.6 |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Design various electronic circuits with this versatile NPN FZT651QTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |