STMicroelectronics LET9060S RF FETs
Trans RF MOSFET N-CH 80V 12A 3-Pin PowerSO-10RF (Straight lead) Tube
제품 기술 사양
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 65 | |
| 15 | |
| 10(Min) | |
| 7 | |
| 1000 | |
| 1 | |
| 74@26V | |
| 2.8@26V | |
| 40@26V | |
| 2.5(Min) | |
| 170000 | |
| 70(Typ) | |
| 16.7 | |
| 1000 | |
| 61 | |
| -65 | |
| 165 | |
| Tube | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Supplier Package | PowerSO-10RF (Straight lead) |
| 3 | |
| Lead Shape | Flat |
Ideal for radio frequency environments this LET9060S RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 170000 mW. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
Symbols and Footprints
| EDA / CAD Models |
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