유럽 연합 RoHS 명령어 | Compliant with Exemption |
미국수출통제분류ECCN 인코딩 | EAR99 |
친환경 무연 | Active |
미국 세관 상품 코드 | 8541.29.00.95 |
SVHC | Yes |
SVHC 기준 초과 | Yes |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 26.4(Max) mm |
Package Width | 5.3(Max) mm |
Package Length | 20.3(Max) mm |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-264 |
Pin Count | 3 |
Lead Shape | Through Hole |
The versatility of this NPN MJL21194G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V.