유럽 연합 RoHS 명령어 | Compliant |
미국수출통제분류ECCN 인코딩 | EAR99 |
친환경 무연 | Active |
미국 세관 상품 코드 | 8541.21.00.95 |
Automotive | No |
PPAP | No |
Channel Type | P |
Configuration | Single |
Maximum Gate Source Voltage (V) | -25 |
Maximum Drain Gate Voltage (V) | 25 |
Maximum Power Dissipation (mW) | 225 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Minimum Drain Saturation Current (mA) | 1.5 |
Mounting | Surface Mount |
Package Height | 0.94 |
Package Width | 1.3 |
Package Length | 2.9 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
The MMBFJ177LT1G JFET transistor, developed by ON Semiconductor, can give you a high level of input resistance, perfect for controlling input voltage. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.