onsemiMMBT2484LT1GGP BJT

Trans GP BJT NPN 60V 0.1A 300mW 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBT2484LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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