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onsemiMMUN2211LT1GDigital BJT - Pre-Biased

Trans Digital BJT NPN 50V 0.1mA 400mW 3-Pin SOT-23 T/R

In contrast to traditional transistors, ON Semiconductor's NPN MMUN2211LT1G digital transistor's can be used in a wide variety of digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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39,716 부품 : 내일 배송

    Total$0.12Price for 1

    • Service Fee  $7.00

      내일 배송

      Ships from:
      미국
      Date Code:
      2232+
      Manufacturer Lead Time:
      11 주
      Minimum Of :
      1
      Maximum Of:
      39716
      Country Of origin:
      중국
         
      • Price: $0.1172
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 내일 배송

      Ships from:
      미국
      Date Code:
      2232+
      Manufacturer Lead Time:
      11 주
      Country Of origin:
      중국
      • In Stock: 39,716 부품
      • Price: $0.1172