onsemiMMUN2237LT1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.94 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN MMUN2237LT1G digital transistor from ON Semiconductor is your solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |