onsemiMUN5211DW1T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 | |
| Lead Shape | Gull-wing |
ON Semiconductor's NPN MUN5211DW1T1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -55 ยฐC and a maximum of 150 ยฐC. It is made in a dual configuration.
| EDA / CAD Models |