| 유럽 연합 RoHS 명령어 | Compliant with Exemption |
| 미국수출통제분류ECCN 인코딩 | EAR99 |
| 친환경 무연 | Active |
| 미국 세관 상품 코드 | 8541.29.00.95 |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the PNP NJD1718T4G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1680 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
