STMicroelectronicsPD55025-ERF FETs
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.49.10.50 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 40 | |
| ±20 | |
| 20(Min) | |
| 7 | |
| 86@12.5V | |
| 6.5@12.5V | |
| 60@12.5V | |
| 2.5 | |
| 79000 | |
| 15(Min) | |
| 14 | |
| 1000 | |
| 55 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
This PD55025-E RF amplifier from STMicroelectronics uses semiconductor technology to operate at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |