onsemiSMMBTA06LT3GGP BJT

Trans GP BJT NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN SMMBTA06LT3G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

530,000 부품 : 2 일 이내 배송

    Total$311.00Price for 10000

    • (10000)

      2 일 이내 배송

      Ships from:
      네덜란드
      Date Code:
      2416+
      Manufacturer Lead Time:
      36 주
      Country Of origin:
      중국
      • In Stock: 530,000 부품
      • Price: $0.0311