onsemiSMMUN2214LT1GDigital BJT - Pre-Biased

Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101

In contrast to traditional transistors, ON Semiconductor's NPN SMMUN2214LT1G digital transistor's can be used in a wide variety of digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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