onsemi SMUN2213T1G Digital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 47 | |
| 0.25@0.3mA@10mA | |
| 1 | |
| 338 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1.09 |
| Package Width | 1.5 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-59 |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor's NPN SMUN2213T1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 338 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
