STMicroelectronicsTIP102Darlington BJT
Trans Darlington NPN 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC 기준 초과 | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
100 | |
100 | |
5 | |
8 | |
50 | |
2.5@80mA@8A|2@6mA@3A | |
1000@3A@4V|200@8A@4V | |
2000 | |
-65 | |
150 | |
Tube | |
Industrial | |
Mounting | Through Hole |
Package Height | 9.15(Max) |
Package Width | 4.6(Max) |
Package Length | 10.4(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-220AB |
3 | |
Lead Shape | Through Hole |
If you require a higher current gain value in your circuit, then the NPN TIP102 Darlington transistor, developed by STMicroelectronics, is for you. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@3A@4 V|200@8A@4V. It has a maximum collector emitter saturation voltage of 2@6mA@3A|2.5@80mA@8A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |