Diodes IncorporatedZHB6790TAGP BJT
Trans GP BJT NPN/PNP 40V 2A 2000mW 8-Pin SM8 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 1.6(Max) |
| Package Width | 3.7(Max) |
| Package Length | 6.7(Max) |
| PCB changed | 8 |
| Supplier Package | SM8 |
| 8 |
The npn and PNP ZHB6790TA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |