Central Semiconductor2N2222A LEAD通用双极型晶体管
Trans GP BJT NPN 40V 0.8A 500mW 3-Pin TO-18 Box
| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 40 | |
| 6 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| -65 to 200 | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.8 | |
| 10 | |
| 100@150mA@10V|35@0.1mA@10V|40@500mA@10V|50@150mA@1V|50@1mA@10V|75@10mA@10V | |
| 500 | |
| -65 | |
| 200 | |
| Box | |
| Diameter | 5.84(Max) |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-18 |
| 3 | |
| Lead Shape | Through Hole |
This NPN 2N2222A LEAD general purpose bipolar junction transistor from Central Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |