Toshiba2SC3324-BL(TE85L,F通用双极型晶体管

Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R

Use this versatile NPN 2SC3324-BL(TE85L,F GP BJT from Toshiba to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.