

Trans RF FET N-CH 12.5V 0.03A 4-Pin SMQ T/R
欧盟RoHS指令 | Compliant |
美国出口管制分类ECCN编码 | EAR99 |
环保无铅 | Obsolete |
Automotive | No |
PPAP | No |
Material | Si |
Configuration | Single Dual Gate |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 12.5 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Continuous Drain Current (A) | 0.03 |
Typical Input Capacitance @ Vds (pF) | 2.5@6V |
Maximum Power Dissipation (mW) | 150 |
Typical Power Gain (dB) | 26 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 125 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 1.1 |
Package Width | 1.5 |
Package Length | 2.9 |
PCB changed | 4 |
Supplier Package | SMQ |
Pin Count | 4 |
A datasheet is only available for this product at this time.
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Trans RF FET N-CH 12.5V 0.03A 4-Pin SMQ T/R
欧盟RoHS指令 | Compliant |
美国出口管制分类ECCN编码 | EAR99 |
环保无铅 | Obsolete |
Automotive | No |
PPAP | No |
Material | Si |
Configuration | Single Dual Gate |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 12.5 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Continuous Drain Current (A) | 0.03 |
Typical Input Capacitance @ Vds (pF) | 2.5@6V |
Maximum Power Dissipation (mW) | 150 |
Typical Power Gain (dB) | 26 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 125 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 1.1 |
Package Width | 1.5 |
Package Length | 2.9 |
PCB changed | 4 |
Supplier Package | SMQ |
Pin Count | 4 |
A datasheet is only available for this product at this time.
制造商