Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R
| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Obsolete |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Single Dual Gate |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 12.5 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Continuous Drain Current (A) | 0.03 |
| Typical Input Capacitance @ Vds (pF) | 2.5@6V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.02@6V |
| Typical Forward Transconductance (S) | 0.0235 |
| Maximum Power Dissipation (mW) | 100 |
| Typical Power Gain (dB) | 26 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 125 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 4 |
| Supplier Package | USQ |
| Pin Count | 4 |
| EDA / CAD Models |
|
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Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R
| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Obsolete |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Single Dual Gate |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 12.5 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Continuous Drain Current (A) | 0.03 |
| Typical Input Capacitance @ Vds (pF) | 2.5@6V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.02@6V |
| Typical Forward Transconductance (S) | 0.0235 |
| Maximum Power Dissipation (mW) | 100 |
| Typical Power Gain (dB) | 26 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 125 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 4 |
| Supplier Package | USQ |
| Pin Count | 4 |
| EDA / CAD Models |
制造商
