| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8542.39.00.60 |
| Automotive | No |
| PPAP | No |
| Diameter | 9.14 |
| Mounting | Through Hole |
| Package Height | 4.45 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
Use this versatile NPN 5962-8777801XA GP BJT from Texas Instruments to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 42 V. This component comes in tray packaging, useful for fast picking and placing of your parts. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 42 V and a maximum emitter base voltage of 42 V.
