Trans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R
| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | EA |
| Automotive | Unknown |
| PPAP | Unknown |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Gate Emitter Voltage (V) | ±30 |
| Typical Collector Emitter Saturation Voltage (V) | 1.57 |
| Maximum Continuous Collector Current (A) | 10 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Power Dissipation (W) | 69 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 2.29 |
| Package Width | 6.1 |
| Package Length | 6.6 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Pin Count | 3 |
| EDA / CAD Models |
|
A datasheet is only available for this product at this time.
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Trans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R
| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | EA |
| Automotive | Unknown |
| PPAP | Unknown |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Gate Emitter Voltage (V) | ±30 |
| Typical Collector Emitter Saturation Voltage (V) | 1.57 |
| Maximum Continuous Collector Current (A) | 10 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Power Dissipation (W) | 69 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 2.29 |
| Package Width | 6.1 |
| Package Length | 6.6 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Pin Count | 3 |
| EDA / CAD Models |
A datasheet is only available for this product at this time.
制造商
