onsemiBC846ALT3G通用双极型晶体管

Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R

Add switching and amplifying capabilities to your electronic circuit with this NPN BC846ALT3G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part if shipping to the United States

库存总量: 130,000 个零件

Regional Inventory: 90,000

    Total$152.00Price for 10000

    90,000 In stock: 可以今天配送

    • (10000)

      可以今天配送

      Ships from:
      美国
      Date Code:
      2344+
      Manufacturer Lead Time:
      12 星期
      Country Of origin:
      中国
      • In Stock: 90,000
      • Price: $0.0152
    • (10000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2344+
      Manufacturer Lead Time:
      12 星期
      Country Of origin:
      中国
      • In Stock: 40,000
      • Price: $0.0151