onsemiBC858ALT1G通用双极型晶体管

Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R

Compared to other transistors, the PNP BC858ALT1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

库存总量: 93,600 个零件

Regional Inventory: 51,600

    Total$0.05Price for 1

    51,600 In stock: 可以今天配送

    • Service Fee  $7.00

      可以今天配送

      Ships from:
      美国
      Date Code:
      2125+
      Manufacturer Lead Time:
      8 星期
      Minimum Of :
      1
      Maximum Of:
      51600
      Country Of origin:
      中国
         
      • Price: $0.0480
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以今天配送

      Ships from:
      美国
      Date Code:
      2125+
      Manufacturer Lead Time:
      8 星期
      Country Of origin:
      中国
      • In Stock: 51,600
      • Price: $0.0480
    • (3000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2422+
      Manufacturer Lead Time:
      8 星期
      Country Of origin:
      中国
      • In Stock: 42,000
      • Price: $0.0152