Infineon Technologies AGBCR183E6327HTSA1数字双极型晶体管
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Single | |
| 50 | |
| 100 | |
| 30@5mA@5V | |
| 200 | |
| 10 | |
| 0.3@0.5mA@10mA | |
| 1 | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Thanks to Infineon Technologies' PNP BCR183E6327HTSA1 digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |