Infineon Technologies AGBCX71HE6327HTSA1通用双极型晶体管
Trans GP BJT PNP 45V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 45 | |
| 45 | |
| 5 | |
| 0.85@0.25mA@10mA|1.05@1.25mA@50mA | |
| 0.25@0.25mA@10mA|0.55@1.25mA@50mA | |
| 0.1 | |
| 180@2mA@5V|30@10uA@5V|80@50mA@1V | |
| 330 | |
| 250(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
The three terminals of this PNP BCX71HE6327HTSA1 GP BJT from Infineon Technologies give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |