| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 11.1(Max) mm |
| Package Width | 3(Max) mm |
| Package Length | 7.8(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-225 |
| 3 | |
| Lead Shape | Through Hole |
Implement this NPN BD137G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |