Diodes IncorporatedBFS17NTA射频双极型晶体管

Trans RF BJT NPN 11V 0.05A 350mW 3-Pin SOT-23 T/R

Compared to other transistors, the BFS17NTA RF bi-polar junction transistor, developed by Diodes Zetex, can properly function in the event of high radio frequency power situations. This product's minimum DC current gain is 56@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.5@5mA@25mA V. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.