| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.75 |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Mode of Operation | Pulsed RF |
| Process Technology | LDMOS |
| Maximum Drain Source Voltage (V) | 135 |
| Maximum Gate Source Voltage (V) | 11 |
| Maximum Gate Threshold Voltage (V) | 2.33 |
| Maximum VSWR | 65 |
| Maximum Gate Source Leakage Current (nA) | 140 |
| Maximum IDSS (uA) | 1.4 |
| Maximum Drain Source Resistance (mOhm) | 290(Typ)@6.08V |
| Typical Input Capacitance @ Vds (pF) | 161@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.3@50V |
| Typical Output Capacitance @ Vds (pF) | 53@50V |
| Output Power (W) | 350 |
| Typical Power Gain (dB) | 27.5 |
| Maximum Frequency (MHz) | 600 |
| Minimum Frequency (MHz) | 10 |
| Typical Drain Efficiency (%) | 75 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 225 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 3.6 |
| Package Width | 9.96 |
| Package Length | 20.57 |
| PCB changed | 4 |
| Standard Package Name | SO |
| Supplier Package | HSOP-F |
| Pin Count | 4 |
