| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.10.00.50 |
| Automotive | No |
| PPAP | No |
| Type | Zener |
| Configuration | Dual Common Anode |
| Direction Type | Uni-Directional |
| Number of Elements per Chip | 2 |
| Maximum Working Voltage (V) | 3.5 |
| Minimum Breakdown Voltage (V) | 5.3 |
| Maximum Breakdown Voltage (V) | 6 |
| Maximum Reverse Leakage Current (uA) | 1 |
| Test Current (mA) | 5 |
| Maximum Power Dissipation (mW) | 150 |
| Capacitance Value (pF) | 8(Typ) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Width | 0.8 |
| Package Length | 1.2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | VESM |
| Pin Count | 3 |
| Lead Shape | Flat |
This DF3A5.6LFV(TPL3,Z) zener diode from Toshiba is perfect for your circuit requiring a diode to operate in the reverse-breakdown region. Its maximum power dissipation is 150 mW. Its maximum leakage current is 1 μA. Its test current is 5 mA. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a dual common anode configuration. This zener diode has an operating temperature range of -55 °C to 150 °C. This zener device has a nominal voltage of 5.6 V and a voltage tolerance of 6%.
