Diodes IncorporatedFMMT493ATA通用双极型晶体管
Trans GP BJT NPN 60V 1A 500mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 120 | |
| 60 | |
| 7 | |
| 1.15@100mA@1A | |
| 0.25@50mA@500mA|0.5@100mA@1A | |
| 1 | |
| 100 | |
| 100@500mA@10V|20@1A@10V|300@1mA@10V|300@250mA@10V|500@150mA@10V | |
| 500 | |
| 150(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.98 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
The versatility of this NPN FMMT493ATA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |