Diodes IncorporatedFMMT555TA通用双极型晶体管
Trans GP BJT PNP 150V 1A 500mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 160 | |
| 150 | |
| 5 | |
| 1@10mA@100mA | |
| 0.3@10mA@100mA | |
| 1 | |
| 100 | |
| 50@10mA@10V|50@300mA@10V | |
| 500 | |
| 100(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.98 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
The versatility of this PNP FMMT555TA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |