Diodes IncorporatedFZT857TA通用双极型晶体管
Trans GP BJT NPN 300V 3.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC超标 | Yes |
Automotive | No |
PPAP | No |
Mounting | Surface Mount |
Package Height | 1.6 |
Package Width | 3.5 |
Package Length | 6.5 |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | SOT |
Supplier Package | SOT-223 |
4 | |
Lead Shape | Gull-wing |
Design various electronic circuits with this versatile NPN FZT857TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.