| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 16 |
| Package Width | 4.7 |
| Package Length | 10.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| Pin Count | 3 |
| Lead Shape | Through Hole |
The IKA08N65H5XKSA1 IGBT transistor from Infineon Technologies will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 31200 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
