欧盟RoHS指令 | Compliant |
美国出口管制分类ECCN编码 | EAR99 |
环保无铅 | Active |
美国海关商品代码 | 8542.39.00.60 |
Automotive | No |
PPAP | No |
Driver Configuration | Inverting|Non-Inverting |
Number of Drivers | 1 |
Type | IGBT|MOSFET |
Number of Outputs | 1 |
Maximum Rise Time (ns) | 20(Typ) |
Maximum Fall Time (ns) | 20(Typ) |
Maximum Propagation Delay Time (ns) | 76(Typ) |
Input Logic Compatibility | CMOS |
Minimum Operating Supply Voltage (V) | 3|15 |
Maximum Operating Supply Voltage (V) | 5.5|30 |
Peak Output Current (A) | 5(Typ) |
Maximum Power Dissipation (mW) | 1255 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 125 |
Special Features | Under Voltage Lockout |
Latch-Up Proof | Yes |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 2.35(Max) |
Package Width | 7.6(Max) |
Package Length | 10.5(Max) |
PCB changed | 16 |
Standard Package Name | SO |
Supplier Package | SOIC |
Pin Count | 16 |
Lead Shape | Gull-wing |
Create an effective common drain amplifier using this ISO5451DWR power MOSFET from Texas Instruments. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components.