| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.75 |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage (V) | 2500 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Typical Collector Emitter Saturation Voltage (V) | 2.6 |
| Maximum Continuous Collector Current (A) | 5.5 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Power Dissipation (W) | 32 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 5.1(Max) |
| Package Width | 14(Max) |
| Package Length | 16.05(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-268 |
| Pin Count | 3 |
This IXGT2N250 IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
